Dynamic electrophysical characterization of porous silicon humidity sensing

dc.contributor.authorBravina, S.
dc.contributor.authorMorozovsky, N.
dc.contributor.authorBoukroub, R.
dc.date.accessioned2017-06-14T17:35:09Z
dc.date.available2017-06-14T17:35:09Z
dc.date.issued2006
dc.description.abstractThe results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated.uk_UA
dc.description.sponsorshipAuthors gratefully acknowledge Conseil Regional of Nord-Pas-de-Calais for financial support (grant no 04140209).uk_UA
dc.identifier.citationDynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 07.07.DF
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121597
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleDynamic electrophysical characterization of porous silicon humidity sensinguk_UA
dc.typeArticleuk_UA

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