AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers

dc.contributor.authorBeketov, G.V.
dc.contributor.authorRashkovetskiy, L.V.
dc.contributor.authorRengevych, O.V.
dc.contributor.authorZhovnir, G.I.
dc.date.accessioned2017-06-11T13:26:43Z
dc.date.available2017-06-11T13:26:43Z
dc.date.issued2000
dc.description.abstractMercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy. Various growth features including monomolecular steps were observed. Both scanning probe microscopy (SPM) images and surface composition analysis with X-ray fluorescence spectroscopy clearly showed that vapor phase growth at the melt homogenization step contributed to epilayer formation and further evolution of its morphology. It was found that formation of flat areas proceeds via a dislocation-controlled monomolecular step growth mechanism. Phenomenological estimation of local supersaturation conditions giving rise to these areas was given on the basis of the interstep distance of the growth spirals originating from screw dislocations. The results obtained suggest the way of radical morphological improvement of the LPE-grown epilayers.uk_UA
dc.description.sponsorshipAuthors would like to thank Dr. S. Kavertsev for helpful discussions and suggestions during the course of this work and to Dr. P. Lytvyn for measurements and iterpretation of X-ray fluorescence spectra.uk_UA
dc.identifier.citationAFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers / G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 45-51. — Бібліогр.: 16 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 68.65, 81.05. E, 81.15. L
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120233
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layersuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
10-Beketov.pdf
Розмір:
456.53 KB
Формат:
Adobe Portable Document Format

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: