Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base

dc.contributor.authorSachenko, A.V.
dc.contributor.authorSokolovskyi, I.O.
dc.date.accessioned2017-05-30T16:58:41Z
dc.date.available2017-05-30T16:58:41Z
dc.date.issued2008
dc.description.abstractAnalytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of QWSCs with the A₃B₅ p-i-n structure is rather low because of a low photovoltage value. To improve this situation, the base region should be doped heavily enough. Light concentration makes it possible to realize high photoconversion efficiencies for A₃B₅ quantum-well p-i-n structures with a low background level of the base region doping. Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with rather high base region doping levels.uk_UA
dc.identifier.citationPhotoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 73.63.Hs, 84.60.Jt, 71.55.Cn, 71.55.Eq
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118590
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titlePhotoconversion efficiency of quantum-well solar cells for the optimum doping level of a baseuk_UA
dc.typeArticleuk_UA

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