Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

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dc.contributor.authorKonoreva, O.V.
dc.contributor.authorLytovchenko, M.V.
dc.contributor.authorMalyi, Ye.V.
dc.contributor.authorOlikh, Ya.M.
dc.contributor.authorPetrenko, I.V.
dc.contributor.authorPinkovska, M.B.
dc.contributor.authorTartachnyk, V.P.
dc.date.accessioned2017-06-14T15:14:14Z
dc.date.available2017-06-14T15:14:14Z
dc.date.issued2016
dc.description.abstractThe effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence intensity of samples previously loaded with US increased during long-term storage (t = 15 h). Passing the current through the diode generates the relaxation process of radiation brightness falling followed by the growth when ultrasound is switched on. The results of calculation of the dislocation density responsible for electroluminescence quenching within the region of electroluminescence degradation are adduced. It was found the ultrasound effect on diodes irradiated with high-energy electrons.uk_UA
dc.identifier.citationAcoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity / O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, Ya.M. Olikh, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 34-38. — Бібліогр.: 20 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherDOI: 10.15407/spqeo19.01.034
dc.identifier.otherPACS 29.40.-n, 85.30.-z, 85.60.Dw
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121521
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAcoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensityuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1