Perspectives for using technology of laser thermolithography
dc.contributor.author | Kryuchyn, A.A. | |
dc.contributor.author | Lapchuk, A.S. | |
dc.contributor.author | Bryts’kyi, A.I. | |
dc.contributor.author | Kostyukevych, S.O. | |
dc.date.accessioned | 2017-05-31T05:17:12Z | |
dc.date.available | 2017-05-31T05:17:12Z | |
dc.date.issued | 2012 | |
dc.description.abstract | Analyzed in this work are the requirements to an optical system for laser thermolithographic recording. It has been shown that possibilities of this type recording with decreasing the registered element sizes can be realized only when using special measures for stabilizing both exposing radiation power and duration of laser pulses. Using the thermolithographic method for making super-dense patterns also requires creation of a specific system for dynamic focusing with accuracy better than 100 nm. It has been shown that the specific heat of thermochemical reaction and thermal resistance of a substrate are critical parameters for this method. | uk_UA |
dc.identifier.citation | Perspectives for using technology of laser thermolithography / A.A. Kryuchyn, A.S. Lapchuk, A.I. Bryts’kyi, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 328-332. — Бібліогр.: 9 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 81.16.Nd | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118722 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Perspectives for using technology of laser thermolithography | uk_UA |
dc.type | Article | uk_UA |
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