Electrical properties of MIS structures with silicon nanoclusters

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dc.contributor.authorBunak, S.V.
dc.contributor.authorIlchenko, V.V.
dc.contributor.authorMelnik, V.P.
dc.contributor.authorHatsevych, I.M.
dc.contributor.authorRomanyuk, B.N.
dc.contributor.authorShkavro, A.G.
dc.contributor.authorTretyak, O.V.
dc.date.accessioned2017-05-26T13:09:03Z
dc.date.available2017-05-26T13:09:03Z
dc.date.issued2011
dc.description.abstractThe theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.uk_UA
dc.description.sponsorshipThis work was supported by Grant №M/90–2010 of Ministry for Education and Science of Ukraine.uk_UA
dc.identifier.citationElectrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 72.20.Ee, 73.40.Qv
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117722
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleElectrical properties of MIS structures with silicon nanoclustersuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 2