Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution

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dc.contributor.authorSelishchev, P.A.
dc.date.accessioned2017-06-11T13:17:47Z
dc.date.available2017-06-11T13:17:47Z
dc.date.issued2000
dc.description.abstractKinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å .uk_UA
dc.description.sponsorshipThe author are grateful to O.A. Leontev for his contributuions to technical providing the work.uk_UA
dc.identifier.citationAccumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS: 36.40. M, 61.66, 61.72. T, 68.65
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/120230
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleAccumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distributionuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1