Electrophysical properties of SmxPb₁₋xTe solid solutions
| dc.contributor.author | Hasanov, H.A. | |
| dc.date.accessioned | 2017-05-30T19:43:16Z | |
| dc.date.available | 2017-05-30T19:43:16Z | |
| dc.date.issued | 2009 | |
| dc.description.abstract | The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions has been ascertained. It is established that increase of samarium content and simultaneous participation of interacting Sm²⁺ and Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of conductivity type from p- to n-type means that obtained solid solutions are partly compensated semiconductors. | uk_UA |
| dc.identifier.citation | Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 72.10.Di, 72.20.Dp, My | |
| dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118688 | |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.status | published earlier | uk_UA |
| dc.title | Electrophysical properties of SmxPb₁₋xTe solid solutions | uk_UA |
| dc.type | Article | uk_UA |
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