Hybrid-integrated version of solid-state components for terahertz frequency region

dc.contributor.author	Zorenko, O.V.
dc.contributor.author	Bychok, A.V.
dc.contributor.author	Kryts’ka, T.V.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Shynkarenko, V.V.
dc.date.accessioned	2017-05-30T06:36:35Z
dc.date.available	2017-05-30T06:36:35Z
dc.date.issued	2014
dc.description.abstract	We present the results of development of key components for THz devices obtained using mathematical modeling of detector sections, radiation source and subharmonic mixers. Schottky barrier diodes with different parameters served as nonlinear elements of the above facilities.	uk_UA
dc.identifier.citation	Hybrid-integrated version of solid-state components for terahertz frequency region / O.V. Zorenko, A.V. Bychok, T.V. Kryts'ka, Ya.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 193-199. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 07.57.Kp, 84.40.-x
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/118387
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Hybrid-integrated version of solid-state components for terahertz frequency region	uk_UA
dc.type	Article	uk_UA

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