A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots
dc.contributor.author | Taqi, A. | |
dc.contributor.author | Diouri, J. | |
dc.date.accessioned | 2017-05-31T05:24:17Z | |
dc.date.available | 2017-05-31T05:24:17Z | |
dc.date.issued | 2012 | |
dc.description.abstract | . Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining potential in the so-called strong-confinement regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both rectangular and parabolic quantum dots, and it displays a very good agreement between the experimental and theoretical results reported in literature. | uk_UA |
dc.identifier.citation | A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 71.35.-y; 73.21.Fg, La | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118728 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots | uk_UA |
dc.type | Article | uk_UA |
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