A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots

dc.contributor.authorTaqi, A.
dc.contributor.authorDiouri, J.
dc.date.accessioned2017-05-31T05:24:17Z
dc.date.available2017-05-31T05:24:17Z
dc.date.issued2012
dc.description.abstract. Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular and parabolic shapes of the confining potential in the so-called strong-confinement regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both rectangular and parabolic quantum dots, and it displays a very good agreement between the experimental and theoretical results reported in literature.uk_UA
dc.identifier.citationA theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 71.35.-y; 73.21.Fg, La
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118728
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleA theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dotsuk_UA
dc.typeArticleuk_UA

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