Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions

Denysyuk, R.O.; Tomashik, V.M.; Tomashik, Z.F.; Chernyuk, O.S.; Grytsiv, V.I.

Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions

dc.contributor.author	Denysyuk, R.O.
dc.contributor.author	Tomashik, V.M.
dc.contributor.author	Tomashik, Z.F.
dc.contributor.author	Chernyuk, O.S.
dc.contributor.author	Grytsiv, V.I.
dc.date.accessioned	2017-05-30T19:40:57Z
dc.date.available	2017-05-30T19:40:57Z
dc.date.issued	2009
dc.description.abstract	Dissolution of CdTe and Cd₁₋xMnxTe single crystals in aqueous solutions of Н₂О₂–НІ–citric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials.	uk_UA
dc.identifier.citation	Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions / R.O. Denysyuk, V.M. Tomashik, Z.F. Tomashik, O.S. Chernyuk, V.I. Grytsiv // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 125-128. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.65.Cf, 42.86.+b
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/118685
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions	uk_UA
dc.type	Article	uk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 2