Classification of microdefects in semiconducting silicon
dc.contributor.author | Talanin, V.I. | |
dc.contributor.author | Talanin, I.E. | |
dc.date.accessioned | 2017-05-28T16:39:55Z | |
dc.date.available | 2017-05-28T16:39:55Z | |
dc.date.issued | 2003 | |
dc.description.abstract | On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter. | uk_UA |
dc.identifier.citation | Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/118081 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Classification of microdefects in semiconducting silicon | uk_UA |
dc.type | Article | uk_UA |
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