Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions

dc.contributor.authorLatyshev, Yu.I.
dc.date.accessioned2017-05-20T06:52:02Z
dc.date.available2017-05-20T06:52:02Z
dc.date.issued2012
dc.description.abstractWe discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing 1/L follows the analog of Josephson equation vF/L = 2eV/h.uk_UA
dc.description.sponsorshipThe author is highly acknowledged to S.A. Brazovskii for fruitful discussions. The work has been supported by RFBR grant No 11-02-01379-a and RAS programs.uk_UA
dc.identifier.citationComparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.isbnPACS: 75.50.+r, 71.45.Lr, 73.40.Gk
dc.identifier.issn0132-6414
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117126
dc.language.isoenuk_UA
dc.publisherФізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН Україниuk_UA
dc.relation.ispartofФизика низких температур
dc.statuspublished earlieruk_UA
dc.subjectКвантовые когерентные эффекты в сверхпроводниках и новые материалыuk_UA
dc.titleComparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctionsuk_UA
dc.typeArticleuk_UA

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