Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals

dc.contributor.authorGalenin, E.
dc.contributor.authorBiatov, M.
dc.contributor.authorGerasymov, I.
dc.contributor.authorGrinyov, B.
dc.contributor.authorSidletskiy, O.
dc.contributor.authorBaranov, V.
dc.contributor.authorBudagov, J.
dc.contributor.authorDavydov, Yu.
dc.contributor.authorGlagolev, V.
dc.date.accessioned2017-06-07T18:10:58Z
dc.date.available2017-06-07T18:10:58Z
dc.date.issued2015
dc.description.abstractA full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield, energy resolution, decay constants and Si⁴⁺/Ge⁴⁺ ratio in the crystals are discussed with regard to ongoing experiments on high energy physics. Crystal composition with better energy resolution 16.2 % at 662 keV irradiation was obtained.uk_UA
dc.identifier.citationEngineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals / E. Galenin, M. Biatov, I. Gerasymov, B. Grinyov, O. Sidletskiy, V. Baranov, J. Budagov, Yu. Davydov, V. Glagolev // Functional Materials. — 2015. — Т. 22, № 4. — С. 423-428. — Бібліогр.: 20 назв. — англ.uk_UA
dc.identifier.issn1027-5495
dc.identifier.otherDOI: dx.doi.org/10.15407/fm22.04.423
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/119614
dc.language.isoenuk_UA
dc.publisherНТК «Інститут монокристалів» НАН Україниuk_UA
dc.relation.ispartofFunctional Materials
dc.statuspublished earlieruk_UA
dc.subjectCharacterization and propertiesuk_UA
dc.titleEngineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystalsuk_UA
dc.typeArticleuk_UA

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