Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

Azhniuk, Yu.M.; Gomonnai, A.V.; Gomonnai, O.O.; Hasynets, S.M.; Kováč, F.; Lopushansky, V.V.; Petryshynets, I.; Rubish, V.M.; Zahn, D.R.T.

Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

dc.contributor.author	Azhniuk, Yu.M.
dc.contributor.author	Gomonnai, A.V.
dc.contributor.author	Gomonnai, O.O.
dc.contributor.author	Hasynets, S.M.
dc.contributor.author	Kováč, F.
dc.contributor.author	Lopushansky, V.V.
dc.contributor.author	Petryshynets, I.
dc.contributor.author	Rubish, V.M.
dc.contributor.author	Zahn, D.R.T.
dc.date.accessioned	2017-06-13T16:50:47Z
dc.date.available	2017-06-13T16:50:47Z
dc.date.issued	2015
dc.description.abstract	Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K).	uk_UA
dc.description.sponsorship	Yu.M. Azhniuk is grateful to Deutscher Akademischer Austauschdienst (DAAD) for the support of his research at Chemnitz University of Technology.	uk_UA
dc.identifier.citation	Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.03.248
dc.identifier.other	PACS 64.70.pn, 78.67.-n, 82.80.Gk
dc.identifier.uri	https://nasplib.isofts.kiev.ua/handle/123456789/121206
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.status	published earlier	uk_UA
dc.title	Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix	uk_UA
dc.type	Article	uk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1

Назва:: 02-Azhniuk.pdf
Розмір:: 524.65 KB
Формат:: Adobe Portable Document Format

Завантажити

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1

Назва:: license.txt
Розмір:: 817 B
Формат:: Item-specific license agreed upon to submission
Опис:

Завантажити

Колекція

Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3