Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties

dc.contributor.authorParanchych, S.Yu.
dc.contributor.authorParanchych, L.D.
dc.contributor.authorTanasyuk, Yu.V.
dc.contributor.authorRomanyuk, V.R.
dc.contributor.authorMakogonenko, V.M.
dc.contributor.authorYurtsenyuk, R.M.
dc.date.accessioned2017-05-28T05:51:49Z
dc.date.available2017-05-28T05:51:49Z
dc.date.issued2003
dc.description.abstractSingle crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition x = 0.05; y = 0.07 were characterized by the minimum in the 3.5-5.5 μm spectral range. In order to understand the nature of it the energy diagram of vanadium levels has been considered. The band gap of the studied solid solutions with different manganese content has been found from the absorption coefficient spectra and compared with those calculated.uk_UA
dc.identifier.citationGrowing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties / S.Yu. Paranchych, L.D. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, V.M. Makogonenko, R.M. Yurtsenyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 153-155. — Бібліогр.: 15 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/118005
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleGrowing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic propertiesuk_UA
dc.typeArticleuk_UA

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