Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

Abstract

The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (annealing temperature T and partial pressure of cadmium PCd vapor). The dominant types of defects that determine the basic properties of the material n- and p-type conduction were determined.