Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114483
ЗМІСТ
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Lashkarev G.V., Sichkovskyi V.I., Radchenko M.V., Aleshkevych P., Dmitriev O.I., Butorin P.E., Kovalyuk Z.D., Szymczak R., Slawska-Waniewska A., Nedelko N., Yakiela R., Balagurov A.M., Beskrovnyy A.I., Dobrowolsk W.
 
Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature
Oberemok O.S., Litovchenko V.G., Gamov D.V., Popov V.G., Melnik V.P., Gudymenko O.Yo., Nikirin V.A., Khatsevich І.M.
Formation of silicon nanoclusters in buried ultra-thin oxide layers
Sopinskyy M.V.; Indutnyi I.Z.; Michailovska K.V.; Shepeliavyi P.E.; Tkach V.M.
Polarization conversion effect in obliquely deposited SiOx films
Studenyak I.P., Izai V.Yu., Stephanovich V.О., Panko V.V., Kúš P., Plecenik A., Zahoran M., Greguš J., Roch T.
Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I Br) single crystals
Gaidar G.P.
Changes in Hall parameters after γ-irradiation (60Со) of n-Ge
Dobrovolskiy Yu.G., Perevertailo V.L., Shabashkevich B.G.
Anti-reflection coatings based on SnO2 SiO2 Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges
Amer H.H., Elkordy M., Zien M., Dahshan A., Elshamy R.A.
Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
Khrypunov G., Meriuts A., Shelest T., Deineko N., Klyui N., Avksentyeva L., Gorbulik V.
The role of copper in bifacial CdTe based solar cells
Kostyukevych K.V., Khristosenko R.V., Shirshov Yu.M., Kostyukevych S.A., Samoylov A.V., Kalchenko V.I.
Multi-element gas sensor based on surface plasmon resonance: recognition of alcohols by using calixarene films
Kovalchuk O.V.
Method and estimation of parameters of dense part of double electrical layer at the interface electrode-solution of the dye in liquid crystal
Dolgov L., Kravchuk R., Rybak A., Kiisk V., Sildos I., Blonskyi I.
Optical properties of the Ti surface structured by femtosecond laser beam
Kozubovsky V.R., Kormosh V.V., Alyakshev I.P., Lishchenko N.H.
Sensors for fire gas detectors
Steblenko L.P., Koplak O.V., Syvorotka I.I., Kravchenko V.S.
Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO2 structure
Vlasenko N.A., Oleksenko P.F., Mukhlyo M.O., Lytvyn P.M., Veligura L.I., Denisova Z.L.
Laser oscillation in Cr2+:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
Freik D.M., Yurchyshyn I.K., Potyak V.Yu., Lysiuk Yu.V.
Size effects in p-PbTe nanostructures on polyamide
Kostyukevych S.O., Muravsky L.I., Fitio V.M., Voronyak T.I., Shepeliavyi P.E., Kostyukevych K.V., Moskalenko N.L., Pogoda V.I.
The new approach to identification of film reflecting holographic marks
Boiko I.I.
Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
Taghiyev T.B.
Photoconductivity and photoluminescence features of γ-irradiated GaS0.75Se0.25‹Er› single crystals
Ushenko Yu. O., Balanetsk V. O., Angelsky O. P.
Jones-matrix images corresponding to networks of biological crystals for diagnostics and classification of their optical properties
Gudenko Yu.M., Vainberg V.V., Poroshin V.M., Tulupenko V.M.
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells