Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114610
ЗМІСТ
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Poroshin V.N., Gaydar A.V., Abramov A.A., Tulupenko V.N.
Stress-induced effects in light scattering by plasmons in p-type germanium
Talanin V.I., Talanin I.E.
Classification of microdefects in semiconducting silicon
Borkovska L.V., Bulakh B.M., Khomenkova L.Yu., Korsunska N.O., Markevich I.V.
Metastable interstitials in CdSe and CdS crystals
Glinchuk K.D., Litovchenko N.M., Strilchuk O.N.
On the origin of 300 K near-band-edge luminescence in CdTe
Opanasyuk A.S., Opanasyuk N.N., Tirkusova N.V.
High-temperature injection spectroscopy of deep traps in CdTe polycrystalline films
Olikh O.Ya.
Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures
Freik D.M., Boychuk V.I., Mezhylovsjka L.I.
Atomic defects and physical-chemical properties of PbTe-InTe solid solutions
Kovalyuk Z.D., Makhniy V.P., Yanchuk O.I.
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions
Bochkova T.M., Plyaka S.N., Sokolyanskii G.Ch.
Unipolar injection currents in Bi4Ge3O12 crystals
Manam J., Sharma S.K.
Thermally stimulated luminescence studies of undoped and doped CaB4O7 compounds
Kaganovich E.B., Kizyak I.M., Kirillova S.I., Konakova R.V., Lytvyn O.S., Lytvyn P.M., Manoilov E.G., Primachenko V.E., Prokopenko I.V.
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
Fodchuk I.M., Gevyk V.B., Gimchinsky O.G., Kislovskii E.N., Kroytor O.P., Molodkin V.B., Olihovskii S.I., Pavelescu E.M., Pessa M.
Structural changes in multilayer systems containing InxGa1-xAs1-yNy quantum wells
Sachenko A.V., Kryuchenko Yu.V., Manoilov E.G., Kaganovich E.B.
A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures
Makara V.A., Melnichenko M.M., Svezhentsova K.V., Khomenkova L.Yu., Shmyryeva O.M.
Structure and luminescence study of nanoporous silicon layers with high internal surface
Samah M., Bouguerra M., Khelfane H.
Optical properties of ZnO aggregates in KBr matrix
Kanevsky S.O., Litovchenko P.G., Opilat V.Ja., Tartachnyk V.P., Pinkovs'ka M.B., Shakhov O.P., Shapar V.M.
Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics
Koshets I.A., Kazantseva Z.I., Shirshov Yu.M.
Polymer films as sensitive coatings for quartz crystal microbalance sensors array
Asghar M.H., Khan M.B., Naseem S.
Modeling high performance multilayer antireflection coatings for visible and infrared (3-5μm) substrates
Maslov V.P., Sarsembaeva A.Z., Sizov F.F.
Influence of elastic deformation on the residual ellipticity of polished optical materials
Borovytsky V.N.
Distortion compensation technique for high resolution microscopy
Popovych K., Nakonechny Yu., Rubish I., Gerasimov V., Leising G.
The study of the lifetime of ZnS-based luminescent films by using the devices of LMS series
Aw K.C., Ibrahim K.
Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure
Kolomzarov Yu., Oleksenko P., Sorokin V., Tytarenko P., Zelinskyy R.
Vacuum method for creation of liquid crystal orienting microrelief