Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 1
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114445
ЗМІСТ
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Korotyeyev V.V.
Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-xAs with delta-doped barriers. Effect of real-space transfer
Bletskan M.M., Bletskan D.I., Kabatsii V.M.
Electronic structure of PbSnS3 and PbGeS3 semiconductor compounds with the mixed cation coordination
Rudko G.Yu., Kovalenko S.A., Gule E.G., Bobyk V.V., Solomakha V.M., Bogoslovskaya A.B.
Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method
Rozouvan T.S., Poperenko L.V., Shaykevich I.A.
Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique
Dmitruk N.L., Borkovskaya O.Yu., Mamykin S.V., Havrylenko T.S., Mamontova I.B., Kotova N.V., Basiuk E.V.
Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
Rusakov K.I., Parashchuk V.V.
Nonlinear-optical processes at streamer discharge in semiconductors
Golenkov A.G., Zhuravlev K.S., Gumenjuk-Sichevska J.V., Lysiuk I.O., Sizov F.F.
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Strelchuk V.V., Kolomys O.F., Golichenko B.O., Boyko M.I., Kaganovich E.B., Krishchenko I.M., Kravchenko S.O., Lytvyn O.S., Manoilov E.G., Nasieka Iu.M.
Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition
Gaidar G.P.
Changes in electrophysical properties of heavily doped n-Ge ‹As› single crystals under the influence of thermoannealings
Makhanets O.M., Kuchak А.І., Gutsul V.I., Voitsekhivska O.M.
Spectral parameters of electron in multi-shell open semiconductor nanotube
Vasin A.V., Ishikawa Y., Rusavsky A.V., Nazarov A.N., Konchitz A.A., Lysenko V.S.
Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films
Red’ko S.M.
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
Kovalchuk A.O., Rudko G.Yu., Fediv V.I., Gule E.G.
Analysis of conditions for synthesis of CdS:Mn nanoparticles
Syngayivska G.I., Korotyeyev V.V.
Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN
Kupchak I.M., Serpak N.F., Strelchuk V.V., Korbutyak D.V.
Vibrational states of hexagonal ZnO doped with Co
Shpotyuk M.V., Vakiv M.M, Shpotyuk O.I, Ubizskii S.B.
On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations
Kondratenko S.V.
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
Bobrenko Yu.N., Pavelets S.Yu., Semikina T.V., Stadnyk O.A., Sheremetova G.I., Yaroshenko M.V.
Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure
Kozachenko V.V., Kondratenko O.S., Normand F.Le
Morphology and optical constants of nanographite films created by thermal vacuum deposition
Vertsimakha G.V.
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers