Semicond. Physics Quantum Electronics & Optoelectronics, 2017, № 2

ЗМІСТ

Title pages and contents

Sabov T.M., Oberemok O.S., Dubikovskyi O.V., Melnik V.P., Kladko V.P., Romanyuk B.M., Popov V.G., Gudymenko O.Yo., Safriuk N.V.
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient

Dovbeshko G.I., Gnatyuk O.P., Karakhim S.O., Doroshenko T.P., Romanyuk V.R.
Surface enhanced imaging and IR spectroscopy of the biological cells on the nanostructured gold film

Borblik V.L.
Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode

Kukhtaruk N.I., Zabudsky V.V., Shevchik-Shekera A.V., Mikhailov N.N., Sizov F.F.
In–HgCdTe–In structures with symmetric nonlinear I–V characteristics for sub-THz direct detection

Steblova O.V., Fedorenko L.L., Evtukh A.A.
Nanostructuring the SiO_x layers by using laser-induced self-organization

Poperenko L.V., Rozouvan S.G., Shaykevich I.A.
London forces in highly oriented pyrolytic graphite

Bacherikov Yu.Yu., Zhuk A.G., Kurichka R.V., Okhrimenko O.B., Gilchuk A.V., Shcherbyna O.V., Herkalyuk M.V.
Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg

Borblik V. L., Shwarts Yu. M., Shwarts M. M., Aleinikov A. B.
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

Dyakonenko N.L., Lykah V.A., Sinelnik A.V., Korzh I.A., Bilozertseva V.I.
Nanostructure of amorphous films

Eladl Sh.M., Saad M.H.
Analysis of a quantum well structure optical integrated device

Kruglenko P.M.
Impact of traps on current-voltage characteristic of n⁺-n-n⁺ diode

Malanych G.P.
Polishing etchant compositions for the chemical treatment of the PbTe and Pb_1-xSn_xTe solid solutions single crystals and methods for their processing. Review

Matveeva L.A., Venger E.F., Kolyadina E.Yu., Neluba P.L.
Quantum-size effects in semiconductor heterosystems

Milenin G.V., Milenin V.V., Redko R.A.
High-frequency electromagnetic radiation of germanium crystals in magnetic fields

Rudko G.Yu.
Novel concepts of negative-n optics in master’s level educational courses

Styopkin V.I., Liakhovetskyi V., Rudenko V.
Using nanosphere lithography for fabrication of a multilayered system of ordered gold nanoparticles

Studenyak I.P., Kutsyk M.M., Bendak A.V., Izai V. Yu., Kus P., Mikula M.
Influence of X-ray irradiation on the optical absorption edge and refractive index dispersion in Cu₆PS₅I-based thin films deposited using magnetron sputtering

Vakhnyak N.D., Lotsko O.P., Budzulyak S.I., Demchyna L.A., Korbutyak D.V., Konakova R.V., Red’ko R.A., Okhrimenko O.B., Berezovska N.I.
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves

Osinsky V., Masol I., Lyahova N., Suhoviy N., Onachenko M., Osinsky A.
Some technology aspects for quantum enestor through A^IIIB^V multicomponent nanoepitaxy

Iliash S.A., Hyrka Yu.V., Kondratenko S.V., Lysenko V.S., Kozyrev Yu.M., Lendel V.V.
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films

Khrypunov G.S., Kopach G.I., Harchenko M.M., Dobrozhan A.І.
The influence of physical and technological magnetron sputtering modes on the structure and optical properties of CdS and CdTe films