Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
Постійний URI цієї колекціїhttps://nasplib.isofts.kiev.ua/handle/123456789/114614
ЗМІСТ
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Baranskyy P.I., Gaydar G.P., Litovchenko P.G.
Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
Kashirina N.I., Lakhno V.D., Sychyov V.V.
Investigation of electron correlation effect on energy spectrum of two-electron systems in crystals with strong electron-phonon coupling
Jivani A.R., Gajjar P.N., Jani A.R.
Total energy, equation of states and bulk modulus of Si and Ge
Deibuk V.G., Korolyuk Yu.G.
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films
Valakh M.Ya., Sadofyev Yu.G., Korsunska N.O., Semenova G.N., Strelchuk V.V., Borkovska L.V., Vuychik M.V., Sharibaev M.
Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence
Seitmuratov M.S., Klad'ko V.P., Gudymenko O.I., Datsenko L.I., Prokopenko I.V.
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
Tagiyev B.G., Madatov R.S., Aydayev F.Sh., Abbasova T.M.
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals
Khomenkova L.Yu., Markevich I.V.
Photo-enchanced defect reactions in CdS:Ag crystals
Morozovska A.N., Obukhovsky V.V., Lemeshko V.V.
Dynamics of photoinduced instability in ferroelectric photorefractive crystals caused by space recharging trap waves
Stronski A.V., Vlcek M., Kostyukevych S.A., Tomchuk V.M., Kostyukevych E.V., Svechnikov S.V., Kudryavtsev A.A., Moskalenko N.L., Koptyukh A.A.
Study of non-reversible photostructural transformations in As40S60-xSex layers applied for fabrication of holographic protective elements
Vasiljev V.A.
Modelling optical spectra and obtaining information on parameters and features of semiconductor structures
Kovalenko S.A., Lisitsa М.P.
Optical size effects in thin gold films
Mеlnichenko L.Yu., Tytarchuk B.B., Shaykevich І.А.
Influence of surface dimensional effects and interband transitions on absorption of light in aluminium
Al-Kadhimi A.J., Davidenko N.A., Derevyanko N.A., Ishchenko A.A., Kuvshinsky N.G., Pavlov V.A.
Electric and photophysical properties of holographic and electroluminescent media based on amorphous molecular semiconductors
Barabash Y., Kharkyanen V., Zabolotny M., Sokolov N.
Holographic interferometry as a method to study conformational changes in macromolecules
Pereira Jr M.F., Prado M., Sampaio R.
Many-body theory of all-optical quantum well logic gates
Aw K.C., Ibrahim K.
Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate
Karim A.
A free-space alignment technique for active optical waveguide components
Borblik V.L., Shwarts Yu.M., Venger E.F.
Effect of mechanical stress on operation of diode temperature sensors
Kravetsky M.Yu., Sypko S.A., Fomin A.V.
Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials
Grigoriev N.N., Kravetsky M.Yu., Paschenko G.A., Sypko S.A., Fomin A.V.
Balance model for contactless chemo-mechanical polishing of wafers
Savin Yu.N.
Growth kinetics of PbS nanocrystals in organo-metallic Langmuir-Blodgett films studied by optical absorption spectroscopy