ЗМІСТ

Kladko V.P., Kuchuk A.V., Safryuk N.V., Machulin V.F., Belyaev A.E., Konakova R.V., Yavich B.S.
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

Belyaev A.E., Boltovets N.S., Kapitanchuk L.M., Konakova R.V., Kladko V.P., Kudryk Ya.Ya., Kuchuk A.V., Lytvyn O.S., Milenin V.V., Korostinskaya T.V., Ataubaeva A.B., Nevolin P.V.
The features of temperature dependence of contact resistivity of Au Ti Pd₂Si p₊-Si ohmic contacts

Bunak S.V., Buyanin A.A., Ilchenko V.V., Marin V.V., Melnik V.P., Khacevich I.M., Tretyak O.V., Shkavro A.G.
Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiO_X layer X ‹ 2

Kolomzarov Yu., Oleksenko P., Rybalochka A., Sorokin V., Tytarenko P., Zelinskyy R.
ITO layers modified in glow discharge plasma for Nematic Liquid Crystal alignment

Lee S.W., Vlaskina S.I., Vlaskin V.I., Zaharchenko I.V., Gubanov V.A., Mishinova G.N., Svechnikov G.S., Rodionov V.E., Podlasov S.A.
Silicon carbide defects and luminescence centers in current heated 6H-SiC

Hontaruk O., Konoreva O., Litovchenko P., Manzhara V., Opilat V., Pinkovska M., Tartachnyk V.
Radiative recombination in initial and electron-irradiated GaP crystals

Lytvyn P.M., Olikh O.Ya., Lytvyn O.S., Dyachyns’ka O.M., Prokopenko I.V.
Ultrasonic assisted nanomanipulations with atomic force microscope

Savchenko D.V., Pöppl A., Kalabukhova E.N., Venger E.F., Gadzira M.P., Gnesin G.G.
Intrinsic defects in nonstoichiometric b-SiC nanoparticles studied by pulsed magnetic resonance methods

Litovchenko V.G., Grygoriev A.A.
Electron-hole Fermi liquid in nanosized semiconductor structures

Kovalenko N.O., Zagoruiko Yu.A., Fedorenko O.O., Kuzminov E.A.
Photoluminescent properties of crystalline solid solution Zn_1-xMg_xSe:Cr²⁺ a new active material for tunable IR lasers

Bilozertseva V.I., Khlyap H.M., Shkumbatyuk P.S., Dyakonenko N.L., Mamaluy A.O., Gaman D.O.
Li-Bi-Se semiconductor thin films: technology structure and electrophysical properties

Goloborodko N.S., Grygoruk V.I., Kurashov V.N., Podanchuk D.V., Goloborodko A.A., Kotov M.M.
Determination of surface defects by using the wavefront scanner 

Zelensky S.E., Kopyshinsky O.V., Garashchenko V.V., Kolesnik A.S., Stadnytskyi V.M., Zelenska K.S., Shynkarenko Ye .V.
Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation

Smyntyna V.A., Sviridova O.V.
Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Veleschuk V.P., Lyashenko O.V., Vlasenko Z.K., Kysselyuk M.P.
Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures 

Semenov V.V., Blonskyi I.V., Gryts V.G.
Compact laser probe for surface acoustic waves

Trachevsky V.V., Steblenko L.P., Demchenko P.Y., Koplak O.V., Kuryliuk A.M., Melnik A.K.
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field

Ilashchuk М.I., Parfenyuk O.A., Ulyanytskiy K.S., Brus V.V., Vakhnyak N.D.
Influence of Cr doping on optical and photoluminescent properties of CdTe

Tretyak O.V., Kozonushchenko O.I., Krivokhizha K.V., Revenko A.S.
Spin-dependent current in silicon p-n junction diodes

Borovytsky V.
Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination

Lysiuk V.O., Moskalenko N.L., Staschuk V.S., Kluy M.I., Vakulenko O.V., Androsyuk I.G., Surmach M.A., Pogoda V.I.
Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions