Зміст

Belyaev A.E., Boltovets N.S., Ivanov V.N., Klad’ko V.P., Konakova R.V., Kudryk Ya.Ya., Kuchuk A.V., Milenin V.V., Sveshnikov Yu.N., Sheremet V.N.

On the current flow mechanism in the Au-TiB_x-n-GaN-i-Al₂O₃ Schottky barrier diodes

Primachenko V.E., Fedorenko L.L., Tsyrkunov Yu.A., Zinio S.A., Kirillova S.I., Chernobai V.A., Venger E.F.

Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition

Holovatsky V., Voitsekhivska O., Gutsul V.

Electron energy spectrum in a spherical quantum dot with smooth confinement

Fedosov A.V., Koval Y.V., Jashchinskij L.V., Kovalchuk O.V.

Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation

Kolinko M.O., Bovgyra O.V.

Calculation of the spectra of characteristic electron losses in indium bromide

Shpotyuk O.I., Vakiv M.M., Butkiewicz B., Kovalskiy A.P., Golovchak R.Ya.

On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses

Grinberg Marek

Local properties of impurity and defects investigated by high pressure spectroscopy

Osinsky V.I.

Information conception of image perception at solid-state lighting

Borblik V.L., Shwarts Yu.M., Shwarts M.M.

Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

Kushnir O.S., Dzendzelyuk O.S., Hrabovskyy V.A.

Polarized optical transmittance spectra of nonlinear thiogallate crystals near "isotropic point"

Makhanets O.M., Gryschuk A.M., Тkach M.V.

Electron hole and exciton spectra in a quantum wire crossing the quantum well

Vovchenko V.V., Staschuk V.S., Poperenko L.V., Lysiuk V.O.

Optical investigation of the electronic structure of alloys Сu-Fе

Savkina R.K., Smirnov A.B., Sizov F.F.

Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence

Nechyporuk B.D., Olekseyuk I.D., Yukhymchuk V.O., Filonenko V.V., Mazurets I.I., Parasyuk O.V.

Obtaining and optical properties of the glasses of the GeS₂–HgS system

Moskvin P.P., Rashkovetsky L.V., Khodakovsky V.V.

Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System

Red'ko R., Red'ko S.

Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers

Nikonyuk E.S., Zakharuk Z.I., Kuchma M.I., Kovalets M.O., Rarenko A.I., Yuriychuk I.M.

Compensation of hole conductivity in CdTe crystals doped with Cr

Moscal D.S., Fedorenko L.L., Yusupov M.M., Golodenko M.M.

Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

Kaminskii V.I., Kovalyuk Z.D., Netyaga V.V., Boledzyuk V.B.

Dielectric characteristics of GaSe nanocrystals intercalated with hydrogen

Vlasenko N.A., Oleksenko P.F., Denisova Z.L., Mukhlyo M.A., Veligura L.I.

Thermofield Cr→Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures

Danilyuk A.I., Dobrovolskiy Yu.G.

Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers

Kosyak V.V., Opanasyuk A.S.

Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films

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