ЗМІСТ

Belyaev A.E., Bobyl A.V., Boltovets N.S., Ivanov V.N., Konakova R.V., Konnikov S.G., Kudryk Ya.Ya., Markovskiy E.P., Milenin V.V., Rudenko E.M., Tereschenko G.F., Ulin V.P., Ustinov V.M., Tsirlin G.E., Shpak A.P.

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Kulish N.R., Lisitsa M.P., Malysh N.I.

Influence of polarization azimuth on twophoton absorption in CdS

Oleksenko P., Sorokin V., Zelinskyy R., Tytarenko P.

LC acousto-optical transducer for nondestructive holographic control systems

Kazantseva Z., Kislyuk V., Kozyarevych I., Lozovski V., Tretyak O.

Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field

Gentsar P.A., Vlasenko A.I., Kudryavtsev A.A.

Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method

Boualleg A., Merabtine N., Benslama M.

Analysis of fractal radiation patterns from concentric-ring hexagonal arrays

Arsentyev I. N., Bobyl A.B., Konnikov S.G., Tarasov I.S., Ulin V.P, Shishkov M.V., Boltovets N.S., Ivanov V.N., Belyaev A.E., Konakova R.V., Kudryk Ya.Ya., Kamalov A.B., Lytvyn P.M., Markovskiy E.P., Milenin V.V., Red’ko R.A.

Porous nanostructured InP: technology, properties, application

Arsentyev I.N., Bobyl A.V., Tarasov I.S., Shishkov M.V., Boltovets N.S., Ivanov V.N., Kamalov A.B., Konakova R.V., Kudryk Ya.Ya., Lytvyn O.S., Lytvyn P.M., Markovskiy E.P., Milenin V.V.

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

Drozdov V.А., Pozhivatenko V.V., Drozdov М.А., Kovalchuk V.V., Moiseev L.M., Moiseeva V.O.

Polymorphism in chalcogenides of alkalineearth metals

Kidalov V.V., Beji L., Sukach G.A.

Optical properties of p-type porous GaAs

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