Electron attachment to atomic hydrogen on the surface of liquid ⁴He

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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України

Анотація

We demonstrate a possibility that helium surface electrons at cryogenic temperatures can be used as a new source of very low energy electrons. Since both electrons (e¯) and hydrogen atoms (H) are bound on liquid helium surface, two-dimensional mixture gas of these two species is available on the surface. We found that low energy collision of e¯ and H drives electron attachment to form a negative hydrogen ion (H¯) in the mixture. From our temperature dependence measurement of the reaction rate, it was found that another H atom participate in the reaction. Namely, the reaction is expressed as H + H + e¯ → H¯ + H. Possible reaction mechanisms are discussed in terms of direct three-body process and dissociative attachment process. Measurements in applied magnetic field (B) show that the reaction rate coefficient is suppressed as ~ B⁻². This implies that electron spin singlet collision is relevant for electron attachment.

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Электроны над жидким гелием

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Electron attachment to atomic hydrogen on the surface of liquid ⁴He / T. Arai, H. Yayama, K. Kono // Физика низких температур. — 2008. — Т. 34, № 4-5. — С. 496–503. — Бібліогр.: 28 назв. — англ.

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