Determination of surface parameters of solids by methods of X-ray total external reflection

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

Анотація

The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored.

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Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ.

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