Phase diagrams of Si₁-xGex solid solution: a theoretical approach

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

Анотація

In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic) concentration of the second constituting element. We have also investigated the phase diagram near the melting temperature as well as at low temperatures and compared with the available experimental results. Our calculated phase diagram near the melting point agrees well with the experimental data.

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Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ.

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