Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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The structure and structural changes under the isothermal annealing of
(GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and
X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has
been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary
GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular
fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the
glass matrix at crystallization corresponds to the structure of crystalline SbSI.
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Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ.