Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
The experimental data on Raman scattering (RS) and optical absorption in
structures with thin silicon layers on various substrates, as well as in multilayer
quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
shown that laser annealing on the above structures leads to changes in spectra of RS and
optical transmission that can be explained within the critical action model. The value of
critical action of laser radiation is determined for the structures studied.
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Variation of optical parameters of multilayer structures
with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ.