Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates

Завантаження...
Ескіз

Дата

Автори

Назва журналу

Номер ISSN

Назва тому

Видавець

Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

Анотація

Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as compared with that of single crystal silicon. Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has been investigated. The results are explained in the frame of qualitative model that involves formation of p-n-transitions in these structures as a result of inversion of the conductivity type in porous silicon nanocrystals under the influence of adsorption of molecular iodine

Опис

Теми

Цитування

Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ.

item.page.endorsement

item.page.review

item.page.supplemented

item.page.referenced