Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the optical gap indicate photomodification of the structure of As₂S₃ glass and fiber based on it.

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Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ.

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