Electrical properties of macroporous silicon structures
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls.
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Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ.