Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases significantly. An analysis is given of a model for radiation defect production. The photoconduction processes are explained from the standpoint of clusterization of such radiation defects.

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Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals / I.S. Virt, V.V. Gorbunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 35-38. — Бібліогр.: 13 назв. — англ.

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