Alloy scattering in quantum well wire structures of semiconductor ternaries

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility.

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Alloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ.

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