Alloy scattering in quantum well wire structures of semiconductor ternaries
Завантаження...
Дата
Автори
Назва журналу
Номер ISSN
Назва тому
Видавець
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility.
Опис
Теми
Цитування
Alloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ.