Activation transport under quantum Hall regime in HgTe-based heterostructure
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Анотація
We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.
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XXI Уральская международная зимняя школа по физике полупроводников
Цитування
Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.