Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Анотація
Performed in this work is the research of the influence of microwave irradiation (2.45 GHz, 24 GHz) on the spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. The transformation of impurity-defect centers in CdTe:Cl, responsible for PL within the spectral range 1.3 to 1.5 eV under microwave irradiation, was analyzed. The parameter of electron-phonon interaction (Huang–Rhys factor) for the donor-acceptor PL band, which depends on the time of microwave irradiation, has been calculated.
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Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves / N.D. Vakhnyak, O.P. Lotsko, S.I. Budzulyak, L.A. Demchyna, D.V. Korbutyak, R.V. Konakova, R.A. Red’ko, O.B. Okhrimenko, N.I. Berezovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 250-253. — Бібліогр.: 7 назв. — англ.