Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves

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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

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Performed in this work is the research of the influence of microwave irradiation (2.45 GHz, 24 GHz) on the spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. The transformation of impurity-defect centers in CdTe:Cl, responsible for PL within the spectral range 1.3 to 1.5 eV under microwave irradiation, was analyzed. The parameter of electron-phonon interaction (Huang–Rhys factor) for the donor-acceptor PL band, which depends on the time of microwave irradiation, has been calculated.

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Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves / N.D. Vakhnyak, O.P. Lotsko, S.I. Budzulyak, L.A. Demchyna, D.V. Korbutyak, R.V. Konakova, R.A. Red’ko, O.B. Okhrimenko, N.I. Berezovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 250-253. — Бібліогр.: 7 назв. — англ.

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