Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Abstract

The comparative analysis of optical characteristics inherent to Er₂O₃/SiC and Er₂O₃/por-SiC/SiC structures has been performed. It has been shown that, regardless of the substrate on which the Er₂O₃ film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er₂O₃ film approaching the stoichiometric one. At the same time, the introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening of the photoluminescence band measured in this structure.