Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals

Abstract

The dose dependence of tensoresistance ρₓ /ρ₀, which was measured at the symmetrical orientation of the deformation axis (compression) relative to all isoenergetic ellipsoids both in the initial and in γ-irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence ρₓ /ρ₀ = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out, and the mechanical stress Х was applied.