Self-organization in irradiated semiconductor crystals caused by thermal annealing

Abstract

Annealing of complex semiconductors GaP and CdP₂, irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α-particles, was carried out, and main electrical parameters (conductivity σ, carrier concentration n, and mobility µ) as well as the positron lifetime τ were studied and analyzed. When the point defect concentration exceeds some critical value, defects of a new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High-temperature annealing of the irradiated sample with increased vacancy concentration causes the appearance of vacancy voids with a lower electron density.