Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates

Abstract

In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy₂O₃ film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of the film-substrate interface and increasing the optical transmission of Dy₂O₃/por-SiC/SiC structure.