Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data

Завантаження...
Ескіз

Дата

Назва журналу

Номер ISSN

Назва тому

Видавець

Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України

Анотація

The structural homogeneity and degree of perfection inherent to mosaic Ge:Sb samples were investigated. The modified methods for analyzing diffraction images of backscattered electrons (Kikuchi patterns) were used to reduce the influence of instrumental factors. The root-mean-square deformations in the local regions of separate grains and at the boundaries between them were determined using the value of the spatial frequency of the energy spectrum of the two-dimensional Fourier transform of Kikuchi patterns. It is shown that the maximum values of deformations (∼3.5⋅10⁻³) are typical for local regions, which are usually located at the boundaries between subgrains. X-ray studies confirm the obtained values of root-mean-square deformations.

Опис

Теми

Semiconductor Physics

Цитування

Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data / M.D. Borcha, M.S. Solodkyi, S.V. Balovsyak, V.M. Tkach, I.I. Hutsuliak, A.R. Kuzmin, O.O. Tkach, V.P. Kladko, O.Yo. Gudymenko, О.І. Liubchenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2019. — Т. 22, № 4. — С. 381-386. — Бібліогр.: 26 назв. — англ.

item.page.endorsement

item.page.review

item.page.supplemented

item.page.referenced