Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Abstract

Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified.