Technology of manufacturing the reliable silicon photoconverters with long operation time
dc.contributor.author | Guseynov, N.A. | |
dc.contributor.author | Askerov, Sh.Q. | |
dc.contributor.author | Aslanov, Sh.S. | |
dc.contributor.author | Agaev, M.N. | |
dc.contributor.author | Gasanov, M.H. | |
dc.date.accessioned | 2017-06-13T11:35:54Z | |
dc.date.available | 2017-06-13T11:35:54Z | |
dc.date.issued | 2005 | |
dc.description.abstract | We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al₈₀Ni₂₀ confirming amorphism were obtained. The key PC parameters are determined. | uk_UA |
dc.identifier.citation | Technology of manufacturing the reliable silicon photoconverters with long operation time / N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 85-87. — Бібліогр.: 7 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 84.60.Jt | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/120974 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Technology of manufacturing the reliable silicon photoconverters with long operation time | uk_UA |
dc.type | Article | uk_UA |
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