Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

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dc.contributor.authorBunak, S.V.
dc.contributor.authorBuyanin, A.A.
dc.contributor.authorIlchenko, V.V.
dc.contributor.authorMarin, V.V.
dc.contributor.authorMelnik, V.P.
dc.contributor.authorKhacevich, I.M.
dc.contributor.authorTretyak, O.V.
dc.contributor.authorShkavro, A.G.
dc.date.accessioned2017-05-26T12:09:53Z
dc.date.available2017-05-26T12:09:53Z
dc.date.issued2010
dc.description.abstractThe theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing.uk_UA
dc.identifier.citationElectrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 73.61.Cw, Ng
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117699
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleElectrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2uk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1