Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field

dc.contributor.authorTrachevsky, V.V.
dc.contributor.authorSteblenko, L.P.
dc.contributor.authorDemchenko, P.Y.
dc.contributor.authorKoplak, O.V.
dc.contributor.authorKuryliuk, A.M.
dc.contributor.authorMelnik, A.K.
dc.date.accessioned2017-05-26T17:59:31Z
dc.date.available2017-05-26T17:59:31Z
dc.date.issued2010
dc.description.abstractIn this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field.uk_UA
dc.identifier.citationChanges in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ.uk_UA
dc.identifier.isbnPACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi
dc.identifier.issn1560-8034
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117805
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleChanges in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic fielduk_UA
dc.typeArticleuk_UA

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