Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

dc.contributor.authorBilozertseva, V.I.
dc.contributor.authorKhlyap, H.M.
dc.contributor.authorShkumbatyuk, P.S.
dc.contributor.authorDyakonenko, N.L.
dc.contributor.authorMamaluy, A.O.
dc.contributor.authorGaman, D.O.
dc.date.accessioned2017-05-26T15:02:43Z
dc.date.available2017-05-26T15:02:43Z
dc.date.issued2010
dc.description.abstractThe results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transmission electron microscopy (TEM) and electron diffraction methods are carried out. Тhe experimental current-voltage dependences and transport of charge carriers are discussed.uk_UA
dc.identifier.citationLi-Bi-Se semiconductor thin films: technology, structure and electrophysical properties / V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko, A.O. Mamaluy, D.O. Gaman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 61-64. — Бібліогр.: 12 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 61.46.-w, 73.63.-b
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117743
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleLi-Bi-Se semiconductor thin films: technology, structure and electrophysical propertiesuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
11-Bilozertseva.pdf
Розмір:
1.17 MB
Формат:
Adobe Portable Document Format

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Завантаження...
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис: