Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals

Скорочена інформація про документ
dc.contributor.authorStudenyak, I.P.
dc.contributor.authorIzai, V.Yu.
dc.contributor.authorStephanovich, V.О.
dc.contributor.authorPanko, V.V.
dc.contributor.authorKúš, P.
dc.contributor.authorPlecenik, A.
dc.contributor.authorZahoran, M.
dc.contributor.authorGreguš, J.
dc.contributor.authorRoch, T.
dc.date.accessioned2017-05-26T15:58:46Z
dc.date.available2017-05-26T15:58:46Z
dc.date.issued2011
dc.description.abstractImplantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric studies of optical absorption edge and luminescence were carried out within the temperature range 77…320 K. The influence of ionic implantation on luminescence spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors have been studied.uk_UA
dc.description.sponsorshipThis work was supported by the Slovak Research and Development Agency as well as Ministry of Education and Science, Youth and Sport of Ukraine.uk_UA
dc.identifier.citationOptical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / .P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 77.80.Bh, 78.40.Ha
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117751
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleOptical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystalsuk_UA
dc.typeArticleuk_UA

Файли

Оригінальний контейнер

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
04-Studenyak.pdf
Розмір:
392.72 KB
Формат:
Adobe Portable Document Format
Завантажити

Контейнер ліцензії

Зараз показуємо 1 - 1 з 1
Ескіз
Назва:
license.txt
Розмір:
817 B
Формат:
Item-specific license agreed upon to submission
Опис:
Завантажити

Колекція

Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3