Frequency-dependent dielectric coefficients of TlInS₂ amorphous films

dc.contributor.authorMustafaeva, S.N.
dc.contributor.authorAsadov, M.M.
dc.contributor.authorQahramanov, K.Sh.
dc.date.accessioned2017-05-27T12:19:23Z
dc.date.available2017-05-27T12:19:23Z
dc.date.issued2007
dc.description.abstractThe frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂ amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂. Such a behavior is caused by optical transitions in TlInS₂ amorphous films.uk_UA
dc.identifier.citationFrequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 71.20.Nr; 71.23.Cq; 71.55.Jv; 72.20.Ee; 72.30.+q; 73.20.At; 73.20.Hb
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/117916
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleFrequency-dependent dielectric coefficients of TlInS₂ amorphous filmsuk_UA
dc.typeArticleuk_UA

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