Frequency-dependent dielectric coefficients of TlInS₂ amorphous films
dc.contributor.author | Mustafaeva, S.N. | |
dc.contributor.author | Asadov, M.M. | |
dc.contributor.author | Qahramanov, K.Sh. | |
dc.date.accessioned | 2017-05-27T12:19:23Z | |
dc.date.available | 2017-05-27T12:19:23Z | |
dc.date.issued | 2007 | |
dc.description.abstract | The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂ amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂. Such a behavior is caused by optical transitions in TlInS₂ amorphous films. | uk_UA |
dc.identifier.citation | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. | uk_UA |
dc.identifier.issn | 1560-8034 | |
dc.identifier.other | PACS 71.20.Nr; 71.23.Cq; 71.55.Jv; 72.20.Ee; 72.30.+q; 73.20.At; 73.20.Hb | |
dc.identifier.uri | https://nasplib.isofts.kiev.ua/handle/123456789/117916 | |
dc.language.iso | en | uk_UA |
dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
dc.status | published earlier | uk_UA |
dc.title | Frequency-dependent dielectric coefficients of TlInS₂ amorphous films | uk_UA |
dc.type | Article | uk_UA |
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