Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

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dc.contributor.authorBelyaev, A.E.
dc.contributor.authorBobyl, A.V.
dc.contributor.authorBoltovets, N.S.
dc.contributor.authorIvanov, V.N.
dc.contributor.authorKonakova, R.V.
dc.contributor.authorKonnikov, S.G.
dc.contributor.authorKudryk, Ya.Ya.
dc.contributor.authorMarkovskiy, E.P.
dc.contributor.authorMilenin, V.V.
dc.contributor.authorRudenko, E.M.
dc.contributor.authorTereschenko, G.F.
dc.contributor.authorUlin, V.P.
dc.contributor.authorUstinov, V.M.
dc.contributor.authorTsirlin, G.E.
dc.contributor.authorShpak, A.P.
dc.date.accessioned2017-06-14T16:46:32Z
dc.date.available2017-06-14T16:46:32Z
dc.date.issued2005
dc.description.abstractThe n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.uk_UA
dc.description.sponsorshipThis work was performed in the framework of the Russian-Ukrainian Program on Nanophysics and Nanoelectronics.uk_UA
dc.identifier.citationNovel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ.uk_UA
dc.identifier.issn1560-8034
dc.identifier.otherPACS 68.55.Ac, 81.15.-z, 85.30.Kk
dc.identifier.urihttps://nasplib.isofts.kiev.ua/handle/123456789/121562
dc.language.isoenuk_UA
dc.publisherІнститут фізики напівпровідників імені В.Є. Лашкарьова НАН Україниuk_UA
dc.relation.ispartofSemiconductor Physics Quantum Electronics & Optoelectronics
dc.statuspublished earlieruk_UA
dc.titleNovel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basisuk_UA
dc.typeArticleuk_UA

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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4